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Low Power Hall Switch
TLE 4913
Features
* Micro power design * 2.4 V to 5.5 V battery operation * High sensitivity and high stability of the
magnetic switching points * High resistance to mechanical stress * Digital output signal * Switching for both poles of a magnet (omnipolar)
SC59-3-x
Functional Description The TLE4913 is an Integrated Hall-Effect Sensor designed specifically to meet the requirements of low-power devices. e.g. as an On/Off switch in Cellular Flip-Phones, with battery operating voltages of 2.4V - 5.5V. Precise magnetic switching points and high temperature stability are achieved through the unique design of the internal circuit. An onboard clock scheme is used to reduce the average operating current of the IC. During the operate phase the IC compares the actual magnetic field detected with the internally compensated switching points. The output Q is switched at the end of each operating phase. During the Stand-by phase the output stage is latched and the current consumption of the device reduced to some A. The IC switching behaviour is Omnipolar, i.e. it can be switched on with either the North or South pole of a magnet. Type TLE 4913 Marking 13s 013 Ordering Code Q62705K 619 Package SC 59-3-x
Data Sheet
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V 2.2, 2004-03-09
Top View GND Sensitive Area 1 3 month year
13 s
VS
ym
2 Q
AEP02801_13
Figure 1 Pin Configuration (top view)
Pin Definitions and Functions Pin 1 2 3 Symbol
VS Q Gnd
Function Supply Voltage Open Drain Input Ground
Data Sheet
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VS
1 Bias and Compensation Circuits
Active Error Compensation
Oscillator & Sequencer
Threshold Generator 3 GND
Hall Probe
Comparator with Hysteresis Decision Latch Logic Chopped Amplifier
2
Q
AEB02800_13
Figure 2 Block Diagram
Circuit Description The Low Power Hall IC Switch comprises a Hall probe, bias generator, compensation circuits, oscillator, output latch and an n-channel open drain output transistor. The bias generator provides currents for the Hall probe and the active circuits. Compensation circuits stabilize the temperature behavior and reduce technology variations. The Active Error Compensation rejects offsets in signal stages and the influence of mechanical stress to the Hall probe caused by molding and soldering processes and other thermal stresses in the package. This chopper technique together with the threshold generator and the comparator ensures high accurate magnetic switching points. Very low power consumption is achieved with a timing scheme controlled by an oscillator and a sequencer. This circuitry activates the sensor for 50 s (typical operating time) sets the output state after sequential questioning of the switch points and latches it with the beginning of the following standby phase (max. 200 ms). In the standby phase the average current is reduced to typical 4 A. Because of the long standby time compared to the operating time the overall averaged current is only slightly higher than the standby current. The output transistor can sink up to 1 mA with a maximal saturation voltage VQSAT.
Data Sheet
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Absolute Maximum Ratings Parameter Supply Voltage Supply Current Output Voltage Output Current Junction temperature Storage temperature Magnetic Flux Density Thermal Resistance P-SC59-3-x Symbol Limit Values min. max. - 0.3 5.5 -1 2.5 - 0.3 5.5 -1 2 - 40 150 - 40 150 - unlimited - 35 Unit V mA V mA C C mT K/W Notes
VS IS VQ IQ Tj TS B Rth JA
Note: Stresses above those listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
ESD Protection Human Body Model (HBM) tests according to: EOS/ESD Association Standard S5.1-1993 and Mil. Std. 883D method 3015.7 Parameter ESD Voltage Symbol Limit Values Min. Max. 4 Unit kV Notes
VESD
R = 1.5 k, C = 100 pF; T = 25 C
Data Sheet
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Operating Range Parameter Supply voltage Output voltage Ambient Temperature
1)
Symbol
VS VQ TA
Limit Values Min. typ. max. 2.4 2.7 5.5 - 0.3 2.7 5.5 - 40 25 85
Unit V V C
Notes
1)
A Ceramic Bypass Capacitor of 100 nF at VS to GND is highly recommended.
AC/DC Characteristics Parameter Averaged Supply Current Averaged Supply Current during Operating Time Transient Peak Supply Current during Operating Time Supply Current during Standby Time Output Saturation Voltage Output Leakage Current Output Rise Time Output Fall Time Operating Time Standby Time Duty Cycle Start-up Time of IC
1) 2)
Symbol
ISAVG ISOPAVG ISOPT ISSTB VQSAT IQLEAK tr tf top tstb top / tstb tstu
Limit Values Min. typ. Max. 1 4 20 0.5 1.1 2.5 - 1 - - - - 15 - - - - 3.5 0.13 0.01 0.5 0.1 50 130 0.039 6 2.5 20 0.4 1 1 1 93 1) 2) 3) 240 - 12
Unit A mA mA A V A s s s ms % s
Notes
t < 100 ns
IQ = 1 mA RL = 2.7 k; CL = 10 pF RL = 2.7 k; CL = 10 pF
4)
for VS=3.5V the max. Operating Time top max = 85s includes the Start-up Time tstu 3) for VS=3.5V the max. Standby Time tstb max = 220ms 4) initial power on time. VS must be applied in this time ( typ. 6s to max. 12s ) to get already a valid output state after the first operating phase (typ. 56s). For rise times of VS > 12s, the output state is valid after the second operating phase (includes one standby phase), e.g. happens only when the battery in flip phones is changed.
Data Sheet
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Magnetic Characteristics Parameter Operate Points
(Output on)
Symbol BOPS BOPN BRPS BRPN BHYS
Release Points
(Output off)
Hysteresis
1)
Limit Values min. typ. max. 2 3.5 5 -5 - 3.5 -2 1,2 2.7 4.2 - 4.2 - 2.6 - 1,2 0.2 0.8 1,6
Unit mT mT mT mT mT
Notes
1) 1)
Positive magnetic fields are related to the approach of a magnetic south pole to the branded side of package
Note: The listed AC/DC and magnetic characteristics are ensured over the operating range of the integrated circuit. Typical characteristics specify mean values expected over the production spread. If not other specified, typical characteristics apply at Tj = 25 C and VS = 2.7 V
Data Sheet
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IS ISOPAVG
Operating Time
ISAVG ISSTB
Standby Time
top
50 s
tstb
130 ms Latch Output
t
AET02802-17
Figure 3 Timing Diagram
VQ as function of the applied B-Field
Figure 4 Output - Signal TLE 4913
Data Sheet
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All curves reflect typical values at the given parameters for TA in C and VS in V.
Magnetic Switching Points versus Temperature (VS=2.7V)
B[mT]
5 4 B OPS 3 2 1 0 -1 -2 B -3 -4 -5 -40 B
RPN
Magnetic Switching Points versus Supply Voltage VS (TA=20C)
B[mT]
5 4 BOPS 3 2 1 0 -1 -2 -3 -4 -5 B RPN BOPN B RPS
B RPS
OPN
-20
0
20
40
60
80
100
2.5
3
3.5
4
4.5
5
5.5
6
T [C]
VS [V]
Supply current ISOPAVG during Operating Time versus Temperature (VS=2.7V)
2.5
Supply current ISOPAVG during Operating Time versus Supply Voltage VS (TA=20C)
2.5
I [mA]
I [mA]
2 2
1.5 1.5 1 I SOPA V G 1 0.5 ISOPAVG
0.5 -40
-20
0
20
40
60
80
100
0
2.5
3
3.5
4
4.5
5
5.5
6
T [C]
V S [V]
Data Sheet
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Supply current ISSTB during Standby Time versus Temperature (VS=2.7V)
20
Supply current ISSTB during Standby Time versus Supply Voltage VS (TA=20C)
20
I [A]
18 16 14 12 10 8 6 ISSTB 4 2 0 -40
I [A]
18 16 14 12 10 8 6 4 2 0
ISSTB
-20
0
20
40
60
80
100
2.5
3
3.5
4
4.5
5
5.5
T [C]
VS [V]
6
Output Saturation voltage VQSAT versus Temperature ( IQ=1mA )
200
Standby Time tstb versus Temperature (VS = 2.7V)
180
V[mV]
V QSAT
t [ms]
170
160 140 120 100 80 60
160
150
140
130
120
40 20 0 -40
tstb
110
-20
0
20
40
60
80
T [C]
100
100 -40
-20
0
20
40
60
80
T [C ]
100
Data Sheet
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V 2.2, 2004-03-09
Top View 3
Marking on P-SC 59-3-x package corresponds to pin 1 of device
13 sym
1 2 Position in Tape: pin 1 opposite of feed hole side
Direction of Unreeling
Package P-SC59-3-x
Pieces / Reel 3.000
Reel 180 mm
Figure 5 Marking and Tape Loading Orientation
Figure 6 Foot Print Reflow Soldering
Data Sheet
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Package Dimensions
P-SC 59-3-x - Package
coplanarity : 0.10mm
Sorts of Packing Package outlines for tubes, trays etc. are contained in our Data Book "Package Information". SMD = Surface Mounted Device
Data Sheet
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V 2.2, 2004-03-09
TLE4913 Revision History: 2004-03-09 Previous Version: 2003-07-16 Page Subjects (major changes since last revision) 4 ESD Level adapted to 4 kV
V 2.2
For questions on technology, delivery and prices please contact the Infineon Technologies Offices in Germany or the Infineon Technologies Companies and Representatives worldwide: see our webpage at http://www.infineon.com We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: feedback.sensors@infineon.com
Edition 2002-08-22 Published by Infineon Technologies AG St.-Martin-Strasse 53 D-81541 Munchen (c) Infineon Technologies AG 2000 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologiesis an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Data Sheet
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V 2.2, 2004-03-09

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